A short time ago, the Innoscience Bi-GaN series and the INN40W08 GaN switch transistor debuted.
The Innoscience INN40W08 is a 40V enhancement-mode FET in the Bi-GaN series in a WLCSP 2x2 package with a very compact size. The chip supports bi-directional blocking capability with resistance as low as 7.8mΩ and can be used to protect circuits in an overvoltage when charging. Or it can apply to the high side electrical load switch circuits and switch circuits for multi-power suppliers system.
ChargerLAB learned that OPPO has already adopted the GaN switch transistor in mass production, becoming the first phone manufacturer with built-in GaN charging protection worldwide, which has extraordinary significance in the industry.
Highlights
Due to the limit of volume and resistance, the silicon MOSFET not only occupies a large amount of space on the phone's main board but also generates considerable temperature rise and efficiency loss when facing high power fast charging, affecting the stability and high power duration of fast charging.
As a third-generation semiconductor material, GaN has advantages of high frequency, high efficiency, low resistance, and so on, which plays a crucial role in charging. Previously, charging protection was done by integrating GaN components into chargers, while Bi-GaN is to build GaN FETs into phones.
Thanks to the small thermal resistance per unit area of GaN and the diode, one Bi-GaN can be used to replace the previous NMOS to realize a bi-directional switch of the currents of charging and discharging, reducing on-state resistance by 50% and temperature rise by 40% in the same occupied board area.
As the charging power of phones continues to rise, the Innoscience Bi-GaN series not only save valuable space inside the phone but also reduces the temperature rise of the phone during charging, maintains a more comfortable temperature during fast charging, extends the duration of fast charging, and provides users with a better charging experience.
Summary of ChargerLAB
The Innoscience INN40W08 is a 40V enhancement-mode FET in the Bi-GaN series in a WLCSP 2x2 package with a very compact size. The chip supports bi-directional blocking capability with resistance as low as 7.8mΩ and can be used to protect circuits in an overvoltage when charging. Or it can apply to the high side electrical load switch circuits and switch circuits for multi-power suppliers system.
As the charging power of phones continues to rise, the Innoscience Bi-GaN series not only save valuable space inside the phone but also reduces the temperature rise of the phone during charging, maintains a more comfortable temperature during fast charging, extends the duration of fast charging, and provides users with a better charging experience.
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