STMicroelectronics Expands MasterGaN Series with New Configurations, Resistance Up to 450 mΩ

STMicroelectronics has released three new devices in the MasterGaN series—MASTERGAN3, MASTERGAN4, and MASTERGAN5—now available through distributors to help engineers design advanced power solutions. The devices vary in on-resistance, with MASTERGAN3 featuring 225 mΩ low-side and 450 mΩ high-side resistance, MASTERGAN4 offering 225 mΩ resistance on both sides, and MASTERGAN5 providing a symmetrical 450 mΩ resistance on both sides. Each device comes with a 600 V rating and a QFN package, enabling straightforward inter-device substitution for design flexibility. 

Engineers working with various applications can choose the optimal configuration for their needs. For instance, MASTERGAN3’s asymmetrical setup may appeal to designers of 45 W chargers, while the higher resistance of MASTERGAN5 is ideal for 100 W LED resonant topologies.

As the only solution integrating a gate driver with two GaN transistors in a single package, MasterGaN simplifies half-bridge configurations and reduces noise sensitivity compared to discrete solutions. With a larger supply of devices in the market, STMicroelectronics aims to dispel cost and availability concerns, enhancing GaN adoption through reliable supply and improved pricing.

To further expedite adoption, STMicroelectronics offers evaluation boards—EVALMASTERGAN3, EVALMASTERGAN4, and EVALMASTERGAN5—to allow engineers to quickly prototype with the MasterGaN series. Each board features a half-bridge configuration, enabling teams to optimize power converters for compact and thermally efficient designs. Additionally, STMicroelectronics is developing a more comprehensive solution for LLC topologies, complete with a resonant stage, to facilitate further testing and integration of MasterGaN devices.