Silan Micro Launches SDH8666 Primary Side Controller with Built-in MOS: Reducing the Size of USB PD Chargers

Silan Microelectronics has launched the SDH8666Q series of SSR flyback power management ICs with built-in high-power MOSFETs. This series is a new generation of SSR flyback control chips from Silan Microelectronics. It uses its in-house patented EHSOP5 package with built-in high-power MOSFET. They can be used in 36W adapters or 48W products in open environments, including universal power adapters, fast charge power adapters, displays, and TVs.

The SDH8666Q series has many advantages:1. The product adopts its own patented EHSOP5 patch package, which is more suitable for automated production.2, The package thickness is only 1.6mm, which is 2/3 of the TO252 package, which has less influence on the temperature rise of the casing.3, Rthja is 60 ° C / W, which is equivalent to TO252, and Rthjc is only 1.05°C/W, which is 1/2 of the TO252 package, and is better for heat dissipation.
Packagings are shown below:

Built-in patented high voltage EDMOS

In addition, the series of products feature built-in patented high-voltage EDMOS, as well as patented high-voltage startup control circuit, omitting the starting resistance needed for a traditional circuit, achieving a standby power consumption as low as 40mW, with the advantages of a fast startup, light load and high efficiency. During the startup process, a high-voltage depletion MOSFET is used for high-voltage charging. After the chip is started, the high-voltage startup controller controls the MOSFET to be turned off, which is more reliable than other high-voltage starting methods, and is optimized for lightning surge test.

The full range of products meets CoC V5 Tier 2 energy efficiency requirement, using QR+PWM+PFM+Burst Mode control mode. Among them, the product optimizes the QR mode frequency-hopping control, and uses different frequency-hopping strategies when the system works in CCM or QR mode to optimize the frequency-hopping control and reduce the system EMI noise. In QR mode, the IC with optimized frequency-hopping is about 5 dB lower than the conducted noise of the non-jitter IC.

It is worth noting that this series of products has VCC HOLD function to prevent undervoltage or restart of the chip during light load or dynamic switching. The product also has comprehensive protection functions, including VCC OVP, OCP, OTP, Brown In/Brown Out, and output OVP. Primary side current sampling resistor short circuit protection, output short circuit protection, secondary side rectifier short circuit protection, etc. At present, this series of circuits has been sold in large quantities and has won the favor of the market.

A typical application of the SDH8666Q (with built-in high voltage start-up circuit)

A typical application of the SD8666QS.

12V/3A DEMO (75mm*45mm*23mm) front.

12V/3A DEMO (75mm*45mm*23mm) back.

Source: Silan Microelectronics