Innoscience's Two FCQFN 150V Products Enter the Industrial Application Market

GaN, known for its high frequency, high efficiency, high power, and high voltage resistance characteristics, is hailed as the promising material of the third-generation semiconductor. Today, with the continuous maturity of GaN technology and the supply chain, the cost is decreasing, leading to the gradual entry of GaN applications in the low-power consumer electronics field, which has become a competitive market.

Also, thanks to its superior features such as high operating frequency, high conversion efficiency, and low on-state resistance, GaN has extensive potential applications in high-power high-frequency fields. Currently, it is expanding towards medium to high-power energy storage, micro inverters, communication base stations, data centers, and other areas.

To promote GaN's application in the high-frequency market, Innoscience has launched two low-voltage GaN products, INN150FQ032A and INN150FQ070A, based on the 150V voltage platform. These platform products meet industrial-grade reliability requirements and are mainly used in solar system optimizers, micro inverters, PD chargers, PSU synchronous rectification, communication power supplies, motor drives, and high-frequency DC-DC converters.

Innoscience's Two FCQFN 150V Products Enter the Industrial Application Market-Chargerlab

The first product, INN150FQ032A, features a compact FCQFN 4 x 6mm package, low switching losses, and excellent efficiency, and is already in successful mass production. Based on the 150V voltage platform technology, Innoscience has recently introduced the 150V/7mΩ device, INN150FQ070A, with a FCQFN 4 x 6mm pin-to-pin compatible design, which has passed small-scale trial production, allowing customers to choose specifications based on their needs.

Features of INN150FQ032A & INN150FQ070A:

l Industrial-grade application
l Ultra-low gate charge
l Ultra-low on-state resistance
l Compact size, FCQFN 4 x 6mm package

Applications of INN150FQ032A & INN150FQ070A:

l High-frequency DC-DC converters
l Solar power optimizers and micro inverters
l PD chargers and PSU synchronous rectification
l Communication power supplies
l Motor drives

INN150FQ032A and INN150FQ070A continue to inherit many characteristics of InnoGaN, such as low on-state resistance, fast switching speed, and no reverse recovery. These features make them ideal for high-frequency and high-efficiency applications, including solar power optimizers, micro inverters, PD chargers, PSU synchronous rectification, communication power supplies, motor drives, and high-frequency DC-DC converters.

INN150FQ032A PDF

INN150FQ070A PDF

Innoscience's introduction of the two different on-state resistance FCQFN packaged chips in the Innoscience 150V Single GaN series not only provides more reference for customer design but also effectively promotes GaN's application in the industrial field.

Based on the research, development, manufacturing, and iteration of large-scale 8-inch silicon-based GaN technology, Innoscience's product quality and cost advantages have been recognized in the industry. While consumer electronics serve as the first stop for GaN's scaled application, the demand in the industrial sector is gradually rising. Innoscience looks forward to cooperating with partners to promote applications in various fields and build a GaN ecosystem.